Electronic Structures of Graphene/MoS2 Heterostructure: Effects of Stacking Orientation, Element Substitution, and Interlayer Distance

https://doi.org/10.22146/ijc.75538

Dian Putri Hastuti(1*), Kenji Nawa(2), Kohji Nakamura(3)

(1) Graduate School of Engineering, Mie University, 1577 Kurimamachiya-cho, Tsu city, Mie 514-8507, Japan
(2) Graduate School of Engineering, Mie University, 1577 Kurimamachiya-cho, Tsu city, Mie 514-8507, Japan; Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
(3) Graduate School of Engineering, Mie University, 1577 Kurimamachiya-cho, Tsu city, Mie 514-8507, Japan
(*) Corresponding Author

Abstract


Effects of stacking orientation, element substitution, and interlayer distance on electronic structures of graphene/MoS2 heterostructures were investigated using first-principles calculations. The results predicted that the stacking orientation does not take a crucial role in changing the electronic structures in contrast to element substitution, which converts the system from semiconductor to metallic. A bandgap opening originating in a Dirac band of graphene is found to be governed by the interface distance between graphene and MoS2 layers.


Keywords


graphene; transition-metal dichalcogenide; heterostructure; electronic structure; first-principles calculations

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DOI: https://doi.org/10.22146/ijc.75538

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