Strong Anisotropic Rashba Effect with Tunable Spin-Splitting in Two-Dimensional Janus Vanadium Dichalcogenides Monolayer

Yusuf Affandi; Moh. Adhib Ulil Absor; Muhammad Anshory; Wardah Amalia

doi:10.22146/ijc.93543

Strong Anisotropic Rashba Effect with Tunable Spin-Splitting in Two-Dimensional Janus Vanadium Dichalcogenides Monolayer

https://doi.org/10.22146/ijc.93543

Yusuf Affandi^(1*), Moh. Adhib Ulil Absor⁽²⁾, Muhammad Anshory⁽³⁾, Wardah Amalia⁽⁴⁾

(1) Instrumentation and Automation Engineering, Faculty of Industrial Technology, Institut Teknologi Sumatera, Way Hui, Lampung Selatan 35365, Indonesia
(2) Department of Physics, Faculty of Mathematics and Natural Sciences, Universitas Gadjah Mada, Sekip Utara BLS 21, Yogyakarta 55281, Indonesia
(3) Department of Physics, Faculty of Science, Institut Teknologi Sumatera, Way Hui, Lampung Selatan 35365, Indonesia
(4) Graduate School of Physics, Department of Physics, Faculty of Mathematics and Natural Sciences, Universitas Gadjah Mada, Sekip Utara BLS 21, Yogyakarta 55281, Indonesia
(*) Corresponding Author

Abstract

Motivated by the recent discovery of the Rashba effect in two-dimensional (2D) Janus Transition Metal Dichalcogenides (TMDs) systems, we explore the Rashba effect on the Janus VXY (X = S, Se, Y = Se, Te) monolayer. By employing first-principles density functional theory (DFT) calculations, we find a strong anisotropic Rashba splitting observed around Γ points in the first Brillouin zone. We analyze this anisotropy of Rashba splitting by using k·p perturbation theory synergized with group symmetry analysis. By giving the effect of the biaxial strain, we manipulate the characteristics of the Rashba splitting on the Janus Vanadium Dichalcogenides system. Through spin texture analysis, we reveal both the in-plane and out-of-plane components of the spin textures, providing further evidence for the anisotropic nature of the Rashba spin-orbit coupling (SOC). The observed tuneable Rashba splitting by applying the strain effect shows that the Janus Vanadium dichalcogenides system has the potential to be used as a semiconductor material for spintronic devices.

Keywords

Rashba splitting; density functional theory; strain effect; vanadium dichalcogenides

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DOI: https://doi.org/10.22146/ijc.93543